This agrees with first-principles calculation. The positron work function was estimated to be positive. These phenomena were found to be dominated by two kinds of positronium with energies of 0.6-1.5 eV and 0.1-0.2 eV, which were attributed to the work-function mechanism and the surface-positron-mediated process, respectively, with contributions from conduction electrons. Overall, the positronium fraction increased with the amount of n -type doping. In heavily doped p -type Si (p ≳1018cm-3 ), IPs increased in two steps: one at 500-600 K and one above 700 K. In undoped and lightly doped Si (n, p ≲1015cm-3 ), IPs decreased from 300 to 500 K and increased above 700 K.

In heavily doped n -type Si (n ≳1018cm-3), the positronium fraction (IPs) increased above 700 K and reached more than 95% at 1000 K. The temperature dependence of the positronium fraction varied with the doping condition, and there were practically no differences between the two surface orientations. Positronium formation at Si(111) and Si(001) surfaces has been investigated by changing the doping level systematically over the range 300-1000 K.

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